2D flash-silicon chip achieves record speed, 94
Fudan University scientists unveil the world’s first 2D flash chip, merging ultrafast memory with CMOS technology.
Researchers develop flash memory device
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an …
Ultra-High-Speed Flash Memory Created by …
Researchers at Fudan University have made a significant advancement in integrated circuit technology. The team led by Zhou Peng …
World's fastest Flash memory developed: writes in just 400 …
Professor Zhou Peng and his team at Fudan University completely reconfigured the structure of Flash memory where instead of traditional silicon, they used two-dimensional …
New graphene-based flash memory writes data in …
Researchers at Fudan University in Shanghai have unveiled a flash memory device that breaks speed records once thought …
[News] Chinese Research Team Developed Ultra …
This marks the fastest semiconductor charge storage technology in the world so far, achieving almost the same storage and …
Fudan's PoX Device: A Quantum Leap in Memory …
Unlike traditional memory devices, where information is stored in relatively sluggish bits and bytes, the PoX device uses these quantum …
2D flash-silicon chip achieves record speed, 94% memory yield
Fudan University scientists unveil the world’s first 2D flash chip, merging ultrafast memory with CMOS technology.
Researchers develop flash memory device
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented program speed of 400 …
Ultra-High-Speed Flash Memory Created by Chinese Researchers
Researchers at Fudan University have made a significant advancement in integrated circuit technology. The team led by Zhou Peng and Liu Chunsen has developed …
New graphene-based flash memory writes data in 400 ...
Researchers at Fudan University in Shanghai have unveiled a flash memory device that breaks speed records once thought unreachable. Dubbed "PoX," the device can program …
[News] Chinese Research Team Developed Ultra-High-Speed …
This marks the fastest semiconductor charge storage technology in the world so far, achieving almost the same storage and computing speed. Once large-scale integration is …
Fudan's PoX Device: A Quantum Leap in Memory Speed
Unlike traditional memory devices, where information is stored in relatively sluggish bits and bytes, the PoX device uses these quantum entities, unlocking ultrafast data storage …
Fudan University Develops World's Fastest Picosecond Flash Memory Device
The innovation hinges on the discovery of a "superinjection" mechanism for charge storage, which redefines the boundaries of existing storage technologies. The device's …
Powering Lebanon’s Future: How Fudan Energy Storage Is …
Enter Fudan energy storage solutions – the silent guardian angels of modern power infrastructure. Let’s explore why this technology matters and how it could flip the script …
Fudan University researchers create record-breaking flash memory device
Researchers at Fudan University in Shanghai have unveiled a groundbreaking picosecond-level flash memory device, achieving an extraordinary programming speed of 400 …
World’s fastest memory writes 25 billion bits per …
A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash memory …
WANG Yonggang
Energy storage/conversion devices, including Li-ion batteries, supercapacitor, Li-sulfur batteries Li-air batteries and wearable and flexible energy storage devices
Fudan Energy Storage Device
Energy storage/conversion devices, including Li-ion batteries, supercapacitor, Li-sulfur batteries Li-air batteries and wearable and flexible energy storage devices ... First-class Scholarship of …
Papers
Wang, N.; Zeng, K.; Zheng, Y.; Jiang, H.; Yang, Y.; Zhang, Y.; Li, D.; Yu, S.; Ye, Q.; Peng, H.*, High‐performance thermoelectric fibers from metal‐backboned polymers for body‐temperature …
Fudan University: The new flexible fiber energy storage device is …
However, how to prepare fiber-polymer energy storage batteries quickly and on a large scale has been a long-standing bottleneck problem in the field of smart fibers . However, Mr. Peng …
Xuemei Sun
Dr. Xuemei Sun Room B4077, Chemistry/Macromolecular Building, Department of Macromolecular Science, Jiangwan Campus of Fudan …
WANG Yonggang
Research Interests Academic Appointments Prizes and awards Biography Teaching Key Publications Energy storage/conversion devices, including Li-ion batteries, supercapacitor, Li …
Fudan energy storage
Here, the key advancements related to fiber-shaped energy storage devices are reviewed, including the synthesis of materials, the design of structures, and the optimization of properties …
Energy Storage via Topological Spin Textures
Topological spin textures are proposed as an energy-storage concept, utilizing the free energy associated with metastable magnetic …
LEBANON ELECTRIC FUDAN ENERGY STORAGE SOLAR …
It is an integrated energy storage product for industrial and commercial applications, with integrated battery, BMS, control box and modular PCS highly integrated in the outdoor …
Materials Science, Department of
The research directions can be categorized into functional polymer materials and practical applications, advanced optoelectronic and energy storage materials, material failure analysis …
Chinese scientists unveil world's fastest flash memory device
Researchers at Fudan University developed a two-dimensional Dirac graphene-channel flash memory using an innovative mechanism, shattering the speed limits of non …
FU Zhengwen
Cheap and Environmentally-Benign Electrochemical Energy Storage and Conversion Devices based on AlI3 Electrolytes. Bofei Xue, Zhengwen Fu*, Hong Li,* Xizhe Liu, Sunchao Cheng, …
2D flash-silicon chip achieves record speed, 94% memory yield
Fudan University scientists unveil the world’s first 2D flash chip, merging ultrafast memory with CMOS technology.
Fudan University researchers create record-breaking flash memory device
Researchers at Fudan University in Shanghai have unveiled a groundbreaking picosecond-level flash memory device, achieving an extraordinary programming speed of 400 …
Papers
Wang, N.; Zeng, K.; Zheng, Y.; Jiang, H.; Yang, Y.; Zhang, Y.; Li, D.; Yu, S.; Ye, Q.; Peng, H.*, High‐performance thermoelectric fibers from metal‐backboned polymers for body‐temperature …
FU Zhengwen
Cheap and Environmentally-Benign Electrochemical Energy Storage and Conversion Devices based on AlI3 Electrolytes. Bofei Xue, Zhengwen Fu*, Hong Li,* Xizhe Liu, Sunchao Cheng, …
Huisheng PENG | Fudan University, Shanghai | Research profile
Rechargeable sodium/chlorine (Na/Cl2) batteries are emerging candidates for sustainable energy storage owing to their superior energy densities and the high abundance of Na and Cl elements.
Chinese researchers make world’s fastest flash memory device
A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit per 400 picoseconds, setting a new record for the fastest …
Mesoporous Materials for Electrochemical Energy Storage …
Lastly, the research challenges and perspectives on mesoporous materials for the future development of energy conversion and storage devices are assessed.
2D flash-silicon chip achieves record speed, 94% memory yield
Fudan University scientists unveil the world’s first 2D flash chip, merging ultrafast memory with CMOS technology.
Fudan University researchers create record-breaking flash memory device
Researchers at Fudan University in Shanghai have unveiled a groundbreaking picosecond-level flash memory device, achieving an extraordinary programming speed of 400 …